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jmnic product specification silicon pnp power transistors 2SB1163 description ? with to-3pl package ? complement to type 2sd1718 ? excellent linearity of h fe ? wide area of safe operation (aso) ? high transition frequency f t applications ? for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol param eter conditions va lue unit v cbo collector-base voltage open emitter -180 v v ceo collector-emitter voltage open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i cm collector current-peak -25 a 3.5 p c collector power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pl) and symbol
jmnic product specification 2 silicon pnp power transistors 2SB1163 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-10a ;i b =-1a -2.5 v v be base-emitter on voltage i c =-8a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-180v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-3 dc current gain i c =-8a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz c ob collector output capacitance f=1mhz;v cb =-10v 230 pf ? h fe-2 classifications q s p 60-100 80-160 100-200
jmnic product specification 3 silicon pnp power transistors 2SB1163 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.50 mm)

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